Field P DMOS transistors

Specifications
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Parameter	Meaning
Function	уцауцацуацуа
Cв, пФ	3
Cд, пФ	3
fгр, МГц	33
h тока	3
H1xV1xT1	3
h21е	3
H2xV2	33
H3xV3	3
Functions: 12H/24H	4
Vb, b2 max, V	4
VCB max, V	4
Vcc	4
VCE max, V	4
Application, features	MOSFET Low-power Vtn= 0,8-2,0V Ubr=50-240V Pmax=1,0 Watt High-power Vtn= 2,0-4,0V Ubr=60-100V Pmax=150 Watt
Process Description	Number of masks, pcs. 7-9 Min design rule,µm 3.0 Substrate: Si/B-doped/ p-type/Res 0,005 Epi layer: thickness (15-34) µm Resistivity (2÷21) Ohm/cm Gate oxide (42,5÷80) nm Interlayer dielectric medium temp. PSG Passivation: low temp. PSG

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