• Semiconductor IC and Discrete Devices Manufacturing under the Customer’s Design (delivery on base of Probe Test)
• Semiconductor IC and Discrete Devices Manufacturing under the Customer’s Design (delivery on the base of PCM)
• Wafer Fab Service – execution of separate Process Flow Steps or blocks (Metal sputtering, film deposition, EPI growing, back grinding, wafers testing and so on)
• Raw Si substrate and EPI manufacturing under the Customer’s Spec

Production Capacity available for Foundry Business:
• 8’’ wafer production line (0.5-0.35μm design rule)
• 6’’ wafer production line (0.8-1.2 μm design rule)
• 4’’ wafer production line (1.2-3.0 μm design rule)

Basic Process available:
a) Integrated Circuits:
• DMOS
• CMOS
• BiCMOS
• CDMOS
• BiCDMOS
• Bipolar
b) Discrete devices:
• D-MOS (≤1000 V)
• Multi-Epi (≤700 V)
• Bipolar
• Process for high frequency devices (≤300 V)

Si substrates and EPI, manufacturing and delivery (according to the Customer's Spec):
• 4", 6", 8’’ wafers
• EPI parameter range: d=0.5...80 μm, ρ=0.1...50 Ω • cm

Mask making:
• Mask Set manufacturing under the Customer’s Spec (GDS II and DB):
a) for contact lithography
b) for Projection Reduction (Stepper lithography) (1:1/1:5/1:10)
• Pellicles manufacturing under the Customer’s Spec
• Manufacture of photomasks with P/R coatings (glass and quartz substrates)

Contract management
Packaging:
• IC and Discrete Devices assembly (packaging) with Testing
• IC and Discrete Devices assembly (packaging) without Testing
• IC and Discrete Devices assembly (packaging) with Testing and Marking
Packages Types available:
a) Integrated Circuits:
• SOP (8-28 LD)
• DIP (8-40 LD)
• SHRINK DIP (30, 42, 52, 56 LD)
• QFP (48, 64, 100 LD)
• SIL (3, 8, 13, 17 LD)
• SIP (9LD)
• TO -220 (3, 5, 7 LD)
• SOT -23, SOT -143, SОТ -223
b) Discrete devices:
• Саsе 22А-01
• DO-34, DO-35
• МЕLF, miniMELF
• SOT -23, SOT -143, SОТ -223
• ISOWATT
• ТО-18, ТО-39, ТО-72, ТO-92, ТО-126,
• ТО-218, ТО-220
• KD-17
• DРАК, D2РАК