• H1xV1xT1: 3
• h21е: 3
• H2xV2: 33
• H3xV3: 3
• Functions: 12H/24H: 4
• Vb, b2 max, V: 4
• VCB max, V: 4
• Vcc: 4
• VCE max, V: 4
• Application, features: MOSFET
  
  Low-power
  
  Vtn= 0,8-2,0V
  
  Ubr=50-240V
  
  Pmax=1,0 Watt
  
  High-power
  
  Vtn= 2,0-4,0V
  
  Ubr=60-100V
  
  Pmax=150 Watt
• Process Description: Number of masks, pcs.                                             7-9
  
  Min design rule,µm                                                     3.0
  
  Substrate:                      Si/B-doped/ p-type/Res 0,005
  
  Epi layer: 
  
  thickness                                                        (15-34) µm
  
  Resistivity                                               (2÷21) Ohm/cm
  
  Gate oxide                                                  (42,5÷80) nm
  
  Interlayer dielectric                        medium temp. PSG 
  
  Passivation:                                            low temp. PSG