Field P DMOS transistors

Field P DMOS transistors

Field P DMOS transistors
  • Function: уцауцацуацуа
  • Cв, пФ: 3
  • Cд, пФ: 3
  • fгр, МГц: 33
  • h тока: 3
  • H1xV1xT1: 3
  • h21е: 3
  • H2xV2: 33
  • H3xV3: 3
  • Functions: 12H/24H: 4
  • Vb, b2 max, V: 4
  • VCB max, V: 4
  • Vcc: 4
  • VCE max, V: 4
  • Application, features: MOSFET

    Low-power

    Vtn= 0,8-2,0V

    Ubr=50-240V

    Pmax=1,0 Watt

     

    High-power

    Vtn= 2,0-4,0V

    Ubr=60-100V

     

    Pmax=150 Watt
  • Process Description: Number of masks, pcs.                                             7-9<br /><br />Min design rule,µm                                                     3.0<br /><br />Substrate:                      Si/B-doped/ p-type/Res 0,005<br /><br />Epi layer: <br /><br />thickness                                                        (15-34) µm<br /><br />Resistivity                                               (2÷21) Ohm/cm<br /><br />Gate oxide                                                  (42,5÷80) nm<br /><br />Interlayer dielectric                        medium temp. PSG <br /><br />Passivation:                                            low temp. PSG