1.5 V, 1.6 µm CMOS, 1 PolySi, 1 Me, low threshold, 150mm wafers

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CMOS processes

1.5 V, 1.6 µm CMOS, 1 PolySi, 1 Me, low threshold, 150mm wafers

Specifications
Purchase and tech. support

Parameter	Meaning
Application, features	Medium-scale integration digital IC for electronic timepieces and micro calculators, VDD 1.5 V¸3 V. NMOS: Vtn= 0.5 V, Usd >10 V PMOS: Vtp= -0.5 V, Usd >10 V
Process Description	Number of masks, pcs. 11 Design rule,µm 1.6 Substrate: Si/ B-doped/ p-type/Res 12 2 wells N/P-well depth, µm 5/6 Gate SiO2, Å 300 Interlayer dielectric – BPSG Channel length: NMOS/PMOS, µm 2.0 space line PolySi , µm 3.2 contacts, µm Ø 1.5 space line Me, µm 3.6

Parameter

Meaning

Application, features

Medium-scale integration digital IC for electronic timepieces and micro calculators, VDD 1.5 V¸3 V.

NMOS: Vtn= 0.5 V, Usd >10 V

PMOS: Vtp= -0.5 V, Usd >10 V

Process Description

Number of masks, pcs.                                                    11

Design rule,µm                                                              1.6

Substrate:           Si/ B-doped/ p-type/Res 12          2 wells

N/P-well depth, µm                                                        5/6

Gate SiO2, Å                                                                 300

Interlayer dielectric – BPSG

Channel length: NMOS/PMOS, µm                               2.0

space line PolySi , µm                                                    3.2

contacts, µm                                                                Ø 1.5

space line Me, µm                                                           3.6

To order

The order, cost and terms of fulfillment of orders for the supply of small-scale batches of products are additionally agreed by the Consumer with the marketing and sales services of OJSC "INTEGRAL" - the management company of the holding "INTEGRAL"

Marketing & Sales Department
Tel.: .....(+375 17) 272 3729
......(+375 17) 353 2257
Fax:......(+375 17) 353 2257
E-mail: export@integral.by