1.5 V, 1.6 µm CMOS, 1 PolySi, 1 Me, low threshold, 150mm wafers
1.5 V, 1.6 µm CMOS, 1 PolySi, 1 Me, low threshold, 150mm wafers
- Application, features: Medium-scale integration digital IC for electronic timepieces and micro calculators, VDD 1.5 V¸3 V.<br /><br /> <br /><br />NMOS: Vtn= 0.5 V, Usd >10 V<br /><br />PMOS: Vtp= -0.5 V, Usd >10 V
- Process Description: Number of masks, pcs. 11<br /><br />Design rule,µm 1.6<br /><br />Substrate: Si/ B-doped/ p-type/Res 12 2 wells <br /><br />N/P-well depth, µm 5/6<br /><br />Gate SiO2, Å 300<br /><br />Interlayer dielectric – BPSG<br /><br />Channel length: NMOS/PMOS, µm 2.0<br /><br />space line PolySi , µm 3.2 <br /><br />contacts, µm Ø 1.5<br /><br />space line Me, µm 3.6