5 V, 3 µm CMOS, 1 PolySi, 1 Me

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CMOS processes

5 V, 3 µm CMOS, 1 PolySi, 1 Me

Specifications
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Parameter	Meaning
Application, features	Small and medium-scale integration logic IC, VDD < 5 V NMOS: Vtn=0.8-1.2 V, Ic >4 mA. Ubr>8V PMOS: Vtр=0.8-1.2 V, Ic >2 mA, Ubr>8V
Process Description	Number of masks, pcs. 11 Design rule,µm 2.0 Substrate: Si/P-doped/ n-type/Res 4.5 N/P-wells depth, µm 6-8 Gate SiO2, Å 425 / 300 Interlayer dielectric: BPSG Channel length: NMOS/PMOS, µm 3-4 Space line PolySi, µm 10 Contacts, µm 4*4 Space line Me, µm 10

Parameter

Meaning

Application, features

Small and medium-scale integration logic IC, VDD < 5 V

NMOS:

Vtn=0.8-1.2 V, Ic >4 mA. Ubr>8V

PMOS:

Vtр=0.8-1.2 V, Ic >2 mA, Ubr>8V

Process Description

Number of masks, pcs.                                          11

Design rule,µm                                                    2.0

Substrate:                       Si/P-doped/ n-type/Res 4.5

N/P-wells depth, µm                                           6-8

Gate SiO2, Å                                              425 / 300

Interlayer dielectric:                                        BPSG

Channel length: NMOS/PMOS, µm                     3-4

Space line PolySi, µm                                           10

Contacts, µm                                                       4*4

Space line Me, µm                                                10

To order

The order, cost and terms of fulfillment of orders for the supply of small-scale batches of products are additionally agreed by the Consumer with the marketing and sales services of OJSC "INTEGRAL" - the management company of the holding "INTEGRAL"

Marketing & Sales Department
Tel.: .....(+375 17) 272 3729
......(+375 17) 353 2257
Fax:......(+375 17) 353 2257
E-mail: export@integral.by