5 V, 1.5 µm CMOS, 1 PolySi, 1 Ме, PolySi- resistors, 150mm wafers

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CMOS processes

5 V, 1.5 µm CMOS, 1 PolySi, 1 Ме, PolySi- resistors, 150mm wafers

Specifications
Purchase and tech. support

Parameter	Meaning
Application, features	Supply voltage controllers NMOS: Vtn= 0.5 V, Usd >10 V PMOS: Vtp= 0.5V, Usd >10 V
Process Description	Number of masks, pcs. 17 Design rule,µm 1.5 Substrate: Si/B-doped/p-type/Res 12; 2 wells N/P-well depth, µm 5/6 P-type PolySi resistors Bipolar vertical NPN transistor Gate SiO2, Å 250 Interlayer dielectric: BPSG Channel length: NMOS/PMOS, µm 1.7 N&P LDD- drains Space line PolySi, µm 2.5 Contacts, µm Ø 1.3 Space line Me, µm 3.5

Parameter

Meaning

Application, features

Supply voltage controllers

NMOS:

Vtn= 0.5 V, Usd >10 V

PMOS:

Vtp= 0.5V, Usd >10 V

Process Description

Number of masks, pcs.                                      17

Design rule,µm                                                   1.5

Substrate:      Si/B-doped/p-type/Res 12;      2 wells

N/P-well depth, µm                                              5/6

P-type PolySi resistors

Bipolar vertical NPN transistor

Gate SiO2, Å                                                       250

Interlayer dielectric:                                       BPSG

Channel length: NMOS/PMOS, µm                   1.7

N&P LDD- drains

Space line PolySi, µm                                          2.5

Contacts, µm                                                     Ø 1.3

Space line Me, µm                                                3.5

To order

The order, cost and terms of fulfillment of orders for the supply of small-scale batches of products are additionally agreed by the Consumer with the marketing and sales services of OJSC "INTEGRAL" - the management company of the holding "INTEGRAL"

Marketing & Sales Department
Tel.: .....(+375 17) 272 3729
......(+375 17) 353 2257
Fax:......(+375 17) 353 2257
E-mail: export@integral.by