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8 V, 0.8 µm, BiCMOS, 3 Poly Si,2 Me, PolySi-emitters, 150mm wafers

8 V, 0.8 µm, BiCMOS, 3 Poly Si,2 Me, PolySi-emitters, 150mm wafers

Parameter Meaning
Application, features Analogue-digital  IC for TV-receivers, Ucc=8V

 

NMOS: Vtn=0.6 V, Usd >12 V

PMOS: Vtр=-0.9 V, Usd >12 V

NPN vertical:

bn =120    Uce=10 V

PNP lateral:

bp =45      Uce=13 V
Process Description Number of masks, pcs.                                           26

Design rule,µm                                                     0.8

Substrate:                           Si/B-doped/ p-type/Res 3

Epitaxy:                 Si/P-doped/ n-type/ Thk 2.4/ Res 4.5

p-well depth with p+cc, µm                                   4.3

n-well depth with n+cc, µm                                   4.3

Gate SiO2, Å                                                        130

Interlayer dielectric:                                         BPSG

Interlevel dielectric:                           PEoxide+ SOG

NMOS/PMOS channel length, µm                 0.9/1.0

N&P LDD- drains

Me I                                               Ti-TiN/Al-Si/TiN

Me II                                                      Ti/Al-Si/TiN

NPN emitter size, µm                                    1.2*3.2

Space line PolySi 2,µm                                       1.8

Contacts 1, µm                                                  Ø 0.9

Space line Me 1, µm                                             2.2

Contacts 2,µm                                                  Ø 0.9

Space line Me 2, µm                                             2.4
The order, cost and terms of fulfillment of orders for the supply of small-scale batches of products are additionally agreed by the Consumer with the marketing and sales services of OJSC "INTEGRAL" - the management company of the holding "INTEGRAL"

Marketing & Sales Department
Tel.: .....(+375 17) 272 3729
       ......(+375 17) 353 2257
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E-mail: export@integral.by

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