-
Function:
уцауцацуацуа
-
Cв, пФ:
3
-
Cд, пФ:
3
-
fгр, МГц:
33
-
h тока:
3
-
H1xV1xT1:
3
-
h21е:
3
-
H2xV2:
33
-
H3xV3:
3
-
Functions: 12H/24H:
4
-
Vb, b2 max, V:
4
-
VCB max, V:
4
-
Vcc:
4
-
VCE max, V:
4
-
Application, features:
MOSFET
Low-power
Vtn= 0,8-2,0V
Ubr=50-240V
Pmax=1,0 Watt
High-power
Vtn= 2,0-4,0V
Ubr=60-100V
Pmax=150 Watt
-
Process Description:
Number of masks, pcs. 7-9<br /><br />Min design rule,µm 3.0<br /><br />Substrate: Si/B-doped/ p-type/Res 0,005<br /><br />Epi layer: <br /><br />thickness (15-34) µm<br /><br />Resistivity (2÷21) Ohm/cm<br /><br />Gate oxide (42,5÷80) nm<br /><br />Interlayer dielectric medium temp. PSG <br /><br />Passivation: low temp. PSG
-
Application, features:
MOSFET
Low-power
Vtn= 0,6-3,0V
Ubr=50-200V
Pmax=1,0 Watt
High-power
Vtn= 2,0-4,0V
Ubr=50-600V
Pmax=200 Watt
-
Process Description:
Number of masks, pcs. 7-9<br /><br />Min design rule,µm 3.0<br /><br />Substrate: Si/Sb-doped/ n-type/Res 0,01<br /><br />Epi layer: <br /><br />Thickness (9÷42) µm<br /><br />Resistivity (0,7÷16) Ohm/cm<br /><br />Gate oxide (42,5÷80) nm<br /><br />Interlayer dielectric - medium temp. PSG <br /><br />Passivation: low temp. PSG
-
Application, features:
MOSFET<br /><br />NMOS: Vtn=2÷4 V<br /><br />Umax= 60÷900 V
-
Process Description:
Number of masks, pcs. 8<br /><br />Min design rule,µm 2.0<br /><br />Substrate: Si/Sb-doped/ n-type/Res 0,015; <br /><br /> Si/ As-doped/ n-type/ Res 0,003<br /><br />Epi layer:<br /><br />thickness 8÷75) µm<br /><br />Resistivity (0,67÷31,5) Ohm/cm<br /><br />Gate oxide (60÷100) nm<br /><br />Interlayer dielectric medium temp. oxide + BPSG <br /><br />Passivation PEoxide + PE SI3N4
