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Field P DMOS transistors

Parameter Meaning
Function уцауцацуацуа
Cв, пФ 3
Cд, пФ 3
fгр, МГц 33
h тока 3
H1xV1xT1 3
h21е 3
H2xV2 33
H3xV3 3
Functions: 12H/24H 4
Vb, b2 max, V 4
VCB max, V 4
Vcc 4
VCE max, V 4
Application, features MOSFET

Low-power

Vtn= 0,8-2,0V

Ubr=50-240V

Pmax=1,0 Watt

 

High-power

Vtn= 2,0-4,0V

Ubr=60-100V

 

Pmax=150 Watt
Process Description Number of masks, pcs.                                             7-9

Min design rule,µm                                                     3.0

Substrate:                      Si/B-doped/ p-type/Res 0,005

Epi layer: 

thickness                                                        (15-34) µm

Resistivity                                               (2÷21) Ohm/cm

Gate oxide                                                  (42,5÷80) nm

Interlayer dielectric                        medium temp. PSG 

Passivation:                                            low temp. PSG 
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