CMOS, 0.35 μm, 2 polySi, 3 metals, E2PROM option, 200 mm wafer

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CMOS, 0.35 μm, 2 polySi, 3 metals, E2PROM option, 200 mm wafer

Specifications
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Parameter	Meaning
Application, features	Digital IC with EEPROM, Epitaxy =2.4¸6.0 V For low-voltage transistors NMOS: Vtn=0.5 V, Usd >7 V PMOS: Vtр=-0.6 V, Usd >7 V For high-voltage transistors Vtn=0.6 V, Usd >16 V PMOS: Vtр=-0.6 V, Usd >9 V
Process Description	Number of photolithographies, pcs. 27 Design rule, μm 0.35 Substrate: 725KDB0,015(100) Epitaxial layer: 15KDB12 2 wells Interlayer dielectric: SACVD SiO2 + PC TEOS, μm 1.05 μm Gate SiO2, Å 250 Tunnel oxide, Å 75 Capacitor dielectric Si3N4, Å 250 Channel length NMOS/PMOS, μm 0.35 for low-voltage transistors NMOS/PMOS, μm 2.5/1.0 for high-voltage transistors N&P LDD- drains Titanium silicide Metal I,2 Ti/AlCu / Ti /TiN Contacts 1 (W-filled) ø 0.5 Metal 1 pitch, μm 0.95 Metal 3 Ti/AlCu Contacts 2,3 (W-filled), μm ø 0.5 Metal 2 pitch, μm 1.1

Parameter

Meaning

Application, features

Digital IC with EEPROM,

Epitaxy =2.4¸6.0 V

For low-voltage transistors

NMOS:

Vtn=0.5 V, Usd >7 V

PMOS:

Vtр=-0.6 V, Usd >7 V

For high-voltage transistors

Vtn=0.6 V, Usd >16 V

PMOS:

Vtр=-0.6 V, Usd >9 V

Process Description

Number of photolithographies, pcs.               27

Design rule, μm                                        0.35

Substrate:                           725KDB0,015(100)

Epitaxial layer:                                  15KDB12

2 wells

Interlayer dielectric:

SACVD SiO2 + PC TEOS, μm            1.05 μm

Gate SiO2, Å                                           250

Tunnel oxide, Å                                          75

Capacitor dielectric                   Si3N4, Å    250

Channel length

NMOS/PMOS, μm     0.35 for low-voltage

                                    transistors

NMOS/PMOS, μm     2.5/1.0 for high-voltage

                                    transistors

N&P LDD- drains

Titanium silicide

Metal I,2                               Ti/AlCu / Ti /TiN

Contacts 1 (W-filled)                              ø 0.5

Metal 1 pitch, μm                                    0.95

Metal 3                                              Ti/AlCu

Contacts 2,3 (W-filled), μm                     ø 0.5

Metal 2 pitch, μm                                      1.1

To order

The order, cost and terms of fulfillment of orders for the supply of small-scale batches of products are additionally agreed by the Consumer with the marketing and sales services of OJSC "INTEGRAL" - the management company of the holding "INTEGRAL"

Marketing & Sales Department
Tel.: .....(+375 17) 272 3729
......(+375 17) 353 2257
Fax:......(+375 17) 353 2257
E-mail: export@integral.by