• Application, features: Fast silicon Shottky diodes for switched mode power supplies <br /><br />Urev V   40-150<br /><br />Irev. µa   < 250<br /><br />Idirect max. A   1-30
• Process Description: Number of masks, pcs.                                                  4<br /><br />Size, mm                                                  0.76x0.76-4x4<br /><br />Substrate: Si/As-doped/ n-type/Thk 460/Res 0.0035 (111)<br /><br />Epi layer:         Si/ P-doped/ n-type/Thk 4.5/Res (0.6-0.8)<br /><br />Isolation:                      p-n junction with field-type oxide<br /><br />Metallization:                                      Al+Mo+Ti-Ni-Ag