Shottky diodes with Mo barrier

Specifications
Purchase and tech. support

Parameter	Meaning
Application, features	Fast silicon Shottky diodes for switched mode power supplies Urev V 40-150 Irev. µa < 250 Idirect max. A 1-30
Process Description	Number of masks, pcs. 4 Size, mm 0.76x0.76-4x4 Substrate: Si/As-doped/ n-type/Thk 460/Res 0.0035 (111) Epi layer: Si/ P-doped/ n-type/Thk 4.5/Res (0.6-0.8) Isolation: p-n junction with field-type oxide Metallization: Al+Mo+Ti-Ni-Ag

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