Discrete Semiconductors

КУ613Б

  • Pin to Pin Compatibility: ВТА208-800В
  • Gate Trigger Current, Igt, mA: ≤50
  • I2t, for Fusing, I2t, A2c: 21
  • Latching Current, IL, mA: ≤60
  • Off-State Leakage Current, Id,Ir,mA: ≤0.5
  • Package: TO-220
  • Peak Gate Current, Igm, A: 2
  • Repetitive Peak Off-State Voltages, V drm, Vrrm, V: 800
  • RMS On-State Current, It (RMS): 8

КУ613А

  • Pin to Pin Compatibility: ВТА208-600В
  • Gate Trigger Current, Igt, mA: ≤50
  • I2t, for Fusing, I2t, A2c: 21
  • Latching Current, IL, mA: ≤60
  • Off-State Leakage Current, Id,Ir,mA: ≤0.5
  • Package: TO-220AB
  • Peak Gate Current, Igm, A: 2
  • Repetitive Peak Off-State Voltages, V drm, Vrrm, V: 600
  • RMS On-State Current, It (RMS): 8

KU251Б

  • Pin to Pin Compatibility: КУ251Б
  • Gate Trigger Current, Igt, mA: ≤0.2
  • I2t, for Fusing, I2t, A2c: 0.415
  • Latching Current, IL, mA: ≤5
  • Off-State Leakage Current, Id,Ir,mA: ≤0.05
  • Package: OD-92
  • Peak Gate Current, Igm, A: ≤1.0
  • Repetitive Peak Off-State Voltages, V drm, Vrrm, V: 800
  • RMS On-State Current, It (RMS): 1

КУ251А

  • Pin to Pin Compatibility: МСR100-8
  • Gate Trigger Current, Igt, mA: ≤0.2
  • I2t, for Fusing, I2t, A2c: 0.415
  • Latching Current, IL, mA: ≤5
  • Off-State Leakage Current, Id,Ir,mA: ≤0.05
  • Package: TO-92
  • Peak Gate Current, Igm, A: ≤1.0
  • Repetitive Peak Off-State Voltages, V drm, Vrrm, V: 600
  • RMS On-State Current, It (RMS): 1

IW0140A4

  • Pin to Pin Compatibility: MU0140A4
  • Max.Reverse Recovery Time tREC, ns: 60
  • Max Reverse Voltage UREV.MAX (V): 400
  • Package: TO-220

IWR0540UM

  • Pin to Pin Compatibility: MUR0540UM
  • Max.Reverse Recovery Time tREC, ns: 60
  • Max Reverse Voltage UREV.MAX (V): 400
  • Non repetive Peak Surge Current IP. max (A): 35
  • Package: TO-220

IWR0520UM

  • Pin to Pin Compatibility: MUR0520UM
  • Max.Reverse Recovery Time tREC, ns: 25
  • Max Reverse Voltage UREV.MAX (V): 200
  • Non repetive Peak Surge Current IP. max (A): 35
  • Package: TO-220

IWR0520FM

  • Pin to Pin Compatibility: MUR0520FM
  • Max.Reverse Recovery Time tREC, ns: 250
  • Max Reverse Voltage UREV.MAX (V): 200
  • Non repetive Peak Surge Current IP. max (A): 35
  • Package: TO-220

IZ3563

  • Pin to Pin Compatibility: MR2563L
  • Function: Power limiting diode for rectifying bridges of alternator plant IRECT=35A; UBR=50-60V
  • Package: DO-21, TO-220

IZ3549

  • Pin to Pin Compatibility: MR2535L
  • Function: Power limiting diode for rectifying bridges of alternator plant IRECT=35A; UBR=36-46V
  • Package: DO-21, TO-220

IZ3527

  • Pin to Pin Compatibility: MR2537L
  • Function: Power limiting diode for rectifying bridges of alternator plant IRECT=35A; UBR=18-23V
  • Package: DO-21, TO-220

IWPH01-02A

  • Pin to Pin Compatibility: S2506-02
  • Function: Photo-diode
  • Package: Special 2-pin package

IWR0520U

  • Pin to Pin Compatibility: MUR0520U
  • Max. instantaneous reverse current (Т=25 С) IREV.,mA: 50
  • Max.Reverse Recovery Time tREC, ns: 25
  • Max Reverse Voltage UREV.MAX (V): 200
  • Non repetive Peak Surge Current IP. max (A): 35
  • Package: TO-220
  • Peak. Rectified Direct current IR.MAX. (А): 5

IWR0520F

  • Pin to Pin Compatibility: MUR0520F
  • Max. instantaneous reverse current (Т=25 С) IREV.,mA: 50
  • Max.Reverse Recovery Time tREC, ns: 250
  • Max Reverse Voltage UREV.MAX (V): 200
  • Non repetive Peak Surge Current IP. max (A): 35
  • Package: TO-220
  • Peak. Rectified Direct current IR.MAX. (А): 5

IZ024N

  • Function: N-Channel MOSFET55 V; 0.075 Ω - 17 A
  • Package: Chip

IWP5NK80

  • Function: N-Channel MOSFET 800 V; 2.4 Ω - 4.3 A
  • Package: TO-220/3

IFW11N90

  • Function: N-Channel MOSFET 900 V; 1.1 Ω - 11 A
  • Package: TO-247

IFW9N90

  • Function: N-Channel MOSFET 900 V; 1.4 Ω - 9 A
  • Package: TO-247

IFW10N80

  • Function: N-Channel MOSFET 800 V; 1.1 Ω - 10 A
  • Package: TO-247

IFF3N80

  • Function: N-Channel MOSFET 800 V; 5.0 Ω - 3 A
  • Package: TO-220FP

IFU1N80

  • Function: N-Channel MOSFET 800 V; 18.0 Ω - 1.2 A
  • Package: I-PAK

IFP1N80

  • Function: N-Channel MOSFET 800 V; 18.0 Ω - 1.2 A
  • Package: TO-220/3

IFF12N65

  • Function: N-Channel MOSFET 650 V; 0.8 Ω - 12 A
  • Package: Chip

IFF12N65

  • Function: N-Channel MOSFET 650 V; 0.8 Ω - 12 A
  • Package: Chip

IFF10N65

  • Function: N-Channel MOSFET 650 V; 0.85 Ω - 10 A
  • Package: Chip

IFP10N65

  • Function: N-Channel MOSFET 650 V; 0.85 Ω - 10 A
  • Package: Chip

IFF7N65

  • Function: N-Channel MOSFET 650 V; 1.3 Ω - 7 A
  • Package: Chip

IFP7N65

  • Function: N-Channel MOSFET 650 V; 1.3 Ω - 7 A
  • Package: Chip

IFF4N65

  • Function: N-Channel MOSFET 650 V; 2.7 Ω - 4 A
  • Package: Chip

IFP4N65

  • Function: N-Channel MOSFET 650 V; 2.7 Ω - 4 A
  • Package: Chip