• Application, features: Digital IMC, microcontrollers with VDD= 5V<br /><br /> <br /><br />NMOS: Vtn= 0.6V, Usd >10 V<br /><br />PMOS: Vtp= 1.0V, Usd >13 V
• Process Description: Number of masks, pcs.                                                    16<br /><br />Design rule,µm                                                                 1.5<br /><br />Substrate:                 Si/B-doped/ p-type/Res 12      2 wells                                               <br /><br />N/P-well depth, µm                                                           5/6<br /><br />Interlayer dielectric:                                                      BPSG<br /><br />Gate SiO2, Å                                                                     250<br /><br />Interlayer dielectric:                                                     BPSG<br /><br />Transistor built in ROM<br /><br />Buried contacts<br /><br />Channel length: NMOS/PMOS, µm                               1.5<br /><br /> N & P LDD- drains<br /><br />space line PolySi,µm                                                       2.5<br /><br />contacts, µm                                                                  Ø 1.5<br /><br />space line Me,µm                                                             3.5