Bipolar technology for the manufacture of transistors, triacs

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Bipolar technology for the manufacture of transistors, triacs

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Parameter	Meaning
Application, features	IT (on-state) = 2,0 A Ubr = (600-800)V
Process Description	Substrate: Si/ P-irradiated / Res 35 10 masks (contact, two-side) Base: boron diffusion, depth, µm 35-45 Cathode : phosphorous diffusion, depth, µm 15-18 p-n junction protection: SiPOS, Si3N4, medium temp. PSG Metallization : Al 2,0 mm Passivation: low temp. PSG, Si3N4 Backside: Ti-Ni-Ag

Parameter

Meaning

Application, features

IT (on-state) = 2,0 A

Ubr = (600-800)V

Process Description

Substrate:                                            Si/ P-irradiated / Res 35

10 masks (contact, two-side)

Base: boron diffusion,

depth, µm                                                                            35-45

Cathode : phosphorous diffusion,

depth, µm                                                                             15-18

p-n junction protection:  SiPOS, Si3N4, medium temp. PSG

Metallization :                                                               Al 2,0 mm

Passivation:                                             low temp. PSG, Si3N4

Backside:                                                                           Ti-Ni-Ag

To order

The order, cost and terms of fulfillment of orders for the supply of small-scale batches of products are additionally agreed by the Consumer with the marketing and sales services of OJSC "INTEGRAL" - the management company of the holding "INTEGRAL"

Marketing & Sales Department
Tel.: .....(+375 17) 272 3729
......(+375 17) 353 2257
Fax:......(+375 17) 353 2257
E-mail: export@integral.by