Bipolar technology for the manufacture of npn-transistors with the range of collector current: 7,5÷16 A

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Bipolar technology for the manufacture of npn-transistors with the range of collector current: 7,5÷16 A

Specifications
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Parameter	Meaning
Application, features	UCB = (80-160) V UCE = (30-90) V Ic= (7,5-16) A h21E >15
Process Description	Epi structure Substrate: Si/B-doped/ p-type/ Res 0,05/ (111): Thickness of Epi layer, µm 25-28 Resistivity, Ohm/cm 8-11 7 masks (contact) Base:Phosphorous ion implantation, depth, µm 4,5-7,5 Emitter: boron diffusion, depth, µm 1,4-2,5 p-n junction protection : SiO2, Ta2,O5 Metallization : Al 4, 0 µm Backside: Ti-Ni-Ag

Parameter

Meaning

Application, features

UCB = (80-160) V

UCE = (30-90) V

Ic= (7,5-16) A

h21E >15

Process Description

Epi structure

Substrate:                       Si/B-doped/ p-type/ Res 0,05/ (111):

Thickness of Epi layer, µm                                               25-28

Resistivity, Ohm/cm                                                              8-11

7 masks (contact)

Base:Phosphorous ion implantation, depth, µm       4,5-7,5

Emitter: boron diffusion, depth, µm                            1,4-2,5

p-n junction protection :                                       SiO2, Ta2,O5

Metallization :                                                              Al  4, 0 µm

Backside:                                                                         Ti-Ni-Ag

To order

The order, cost and terms of fulfillment of orders for the supply of small-scale batches of products are additionally agreed by the Consumer with the marketing and sales services of OJSC "INTEGRAL" - the management company of the holding "INTEGRAL"

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