Bipolar technology for the manufacture of high-power npn-transistors with the range of operating voltages: 300-700 V

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Bipolar technology for the manufacture of high-power npn-transistors with the range of operating voltages: 300-700 V

Specifications
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Parameter	Meaning
Application, features	UCB = (300-700) V UCE = (300-400) V Ic= (0,5-8,0) A h21E =(8-40)
Process Description	Epi structure Substrate: Si/ Sb-doped/ n-type/Res 0,01 (111): Thickness of Epi layer, µm 50-80 Resistivity, Ohm/cm 40-50 7-8 masks (contact) Base: ion implantation, depth, µm 2,8-4,6 Emitter: diffusion, depth, µm 1,4-2,8 collector-base p-n junction protection: SiPOS Metallization : Al 1,4 ; 4, 5 µm Backside: Ti-Ni-Ag Passivation: Low temp. PSG

Parameter

Meaning

Application, features

UCB = (300-700) V

UCE = (300-400) V

Ic= (0,5-8,0) A

h21E =(8-40)

Process Description

Epi structure

Substrate:                        Si/ Sb-doped/ n-type/Res 0,01 (111):

Thickness of Epi layer, µm                                                 50-80

Resistivity, Ohm/cm                                                             40-50

7-8 masks (contact)

Base: ion implantation,

depth, µm                                                                             2,8-4,6

Emitter: diffusion,

depth, µm                                                                             1,4-2,8

collector-base p-n junction protection:                            SiPOS

Metallization :                                                       Al   1,4 ; 4, 5 µm

Backside:                                                                           Ti-Ni-Ag

Passivation:                                                         Low temp. PSG

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