Bipolar technology for the manufacture of high-power npn-transistors with Darlington

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Bipolar technology for the manufacture of high-power npn-transistors with Darlington

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Parameter	Meaning
Application, features	UCB = (300-350) V UCE = (150-350) V Ic= (5-15) A h21E >100
Process Description	Epi structure: Substrate: Si/ Sb-doped/ n-type/Res 0,01 (111): Thickness of Epi layer, µm 27-38 Resistivity, Ohm/cm 8-21 6-7 masks (contact) Base: ion implantation, depth, µm 6-8 Emitter: diffusion, depth, µm 2,5-5,5 collector-base p-n junction protection : SiPOS Metallization : Al 4, 5 µm Backside: Ti-Ni-Ag Passivation: Low temp. PSG

Parameter

Meaning

Application, features

UCB = (300-350) V

UCE = (150-350) V

Ic= (5-15) A

h21E >100

Process Description

Epi structure:

Substrate:                         Si/ Sb-doped/ n-type/Res 0,01 (111):

Thickness of Epi layer, µm                                                   27-38

Resistivity, Ohm/cm                                                                  8-21

6-7 masks (contact)

Base: ion implantation,

depth, µm                                                                                     6-8

Emitter: diffusion,

depth, µm                                                                              2,5-5,5

collector-base p-n junction protection :                           SiPOS

Metallization :                                                                   Al 4, 5 µm

Backside:                                                                           Ti-Ni-Ag

Passivation:                                                           Low temp. PSG

To order

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Tel.: .....(+375 17) 272 3729
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