Bipolar technology for the manufacture of high-power npn-transistors with Darlington

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Bipolar technology for the manufacture of high-power npn-transistors with Darlington

Specifications
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Parameter	Meaning
Application, features	UCB = (60-70) V UCE = (60-70) V Ic= (2,0-12) A h21E >500
Process Description	Epi structure: Substrate: Si/ B-doped/ p-type/ Res 0,05/ (111): Thickness of the layer, µm 25-33 Resistivity, Ohm/cm 10-18 6,7 masks (contact) Base: Phosphorous ion implantation, depth, µm 6-8 Emitter: boron diffusion, depth, µm 2,5-5,5 p-n junction protection : SiO2, Ta2O5 Metallization : Al 4, 5 µm Backside: Ti-Ni-Ag

Parameter

Meaning

Application, features

UCB = (60-70) V

UCE = (60-70) V

Ic= (2,0-12) A

h21E >500

Process Description

Epi structure:

Substrate:                        Si/ B-doped/ p-type/ Res 0,05/ (111):

Thickness of the layer, µm                                                 25-33

Resistivity, Ohm/cm                                                            10-18

6,7 masks (contact)

Base: Phosphorous ion implantation,

depth, µm                                                                                  6-8

Emitter: boron diffusion,

depth, µm                                                                            2,5-5,5

p-n junction protection :                                          SiO2, Ta2O5

Metallization :                                                                 Al 4, 5 µm

Backside:                                                                            Ti-Ni-Ag

To order

The order, cost and terms of fulfillment of orders for the supply of small-scale batches of products are additionally agreed by the Consumer with the marketing and sales services of OJSC "INTEGRAL" - the management company of the holding "INTEGRAL"

Marketing & Sales Department
Tel.: .....(+375 17) 272 3729
......(+375 17) 353 2257
Fax:......(+375 17) 353 2257
E-mail: export@integral.by