5 V, «Isoplanar – 1» “BpI-30-5”
Parameter | Meaning |
---|---|
Application, features | Small and medium-scale integration digital-analogue IC, VDD < 5V NPN transistor vertical: bn =100 Uсе= 8 V PNP transistor lateral: bр =25 Uce=20 V Resistors in layer: Base |
Process Description | Number of masks, pcs. 15 Mean design rule,µm 3.0 Substrate: Si/B-doped/ p-type/Thk 460/Res 10/ (111); Buried layers: Si/Sb-doped/ n-type/Thk 2.5/Res 35; Si/ B-doped/ p-type/Thk 1.95/Res210; Epi layer: Si/P-doped/ n-type/Thk 1.5/Res 0.3; Isolation: LOCOS + p+ - guard rings p-base depth, µm 0.854 N+ emitter depth, µm 0.55 Emitter size, µm 2*3 Distance between transistors, µm 2 Switching: contacts 1, µm 2*3 space line Me 1, µm 6.5 contacts 2 , µm 4*4 space line Me 2, µm 10.0 |
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Marketing & Sales Department
Tel.: .....(+375 17) 272 3729
......(+375 17) 353 2257
Fax:......(+375 17) 353 2257
E-mail: export@integral.by
Tel.: .....(+375 17) 272 3729
......(+375 17) 353 2257
Fax:......(+375 17) 353 2257
E-mail: export@integral.by