40 V, p-n junction isolation “Bp30-40”

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40 V, p-n junction isolation “Bp30-40”

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Parameter	Meaning
Application, features	Small-scaleintegrationdigital-analogueIC, VDD< 40 V NPNtransistor vertical: bn =150 Uce=48 V РNP transistor lateral: bр =65 Uсе=60 V РNP transistorvertical: bр =60 Uсе=60 V Capacitors:emitter-base; collector-base; Ме-n+; Ме1-Ме2. Resistors in layers: Isolation; Base; Resistor. PolySi
Process Description	Number of masks, pcs. 8-13 Mean design rule,µm 8.0 Substrate: Si/B-doped/ p-type/Thk 460/Res 10/ (111) Buried layers: Si/Sb-doped/ n-type/Thk 6.0/Res20; Si/B-doped/ p-type/Thk 1.95/Res210 ; Epi layer: Si/P-doped/ n-type/Thk 13/ Res 3.5; Isolation: p-n junction p-base depth, µm 2.0 N+emitter depth, µm 1.7 Emitter size, µm 99 Distance between transistors, mm 4 Switching: contacts 1, µm 33 space line Me 1, µm 9.0 contacts 2, µm 4*4 space line Me 2, µm 14.0

Parameter

Meaning

Application, features

Small-scaleintegrationdigital-analogueIC, VDD< 40 V

NPNtransistor vertical:

bn =150 Uce=48 V

РNP transistor lateral:

bр =65 Uсе=60 V

РNP transistorvertical:

bр =60 Uсе=60 V

Capacitors:emitter-base; collector-base; Ме-n+;

Ме1-Ме2.

Resistors in layers:

Isolation; Base; Resistor.

PolySi

Process Description

Number of masks, pcs.                                                       8-13

Mean design rule,µm                                                              8.0

Substrate:            Si/B-doped/ p-type/Thk 460/Res 10/ (111)

Buried layers:                Si/Sb-doped/ n-type/Thk 6.0/Res20;

                                    Si/B-doped/ p-type/Thk 1.95/Res210 ;

Epi layer:                       Si/P-doped/ n-type/Thk 13/ Res 3.5;

Isolation:                                                    p-n junction

p-base depth, µm                                                                   2.0

N+emitter depth, µm                                                               1.7

Emitter size, µm                                                                      9*9

Distance between transistors, mm                                        4

Switching:

contacts 1, µm                                                                         3*3

space line Me 1, µm                                                             9.0

contacts 2, µm                                                                        4*4

space line Me 2, µm                                                            14.0

To order

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