20 V, p-n junction isolation

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20 V, p-n junction isolation

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Parameter	Meaning
Application, features	Small and medium-scale integration digital-analogue IC, VDD < 18 V NPN Vertical: bn=150 Uce=28 V РNP Lateral: bр=35 Uсе=45 V РNP Vertical: bр=35 Uсе=45 V I2L gate Capacitors:emitter-base; collector-base; Ме-n+; Ме1-Ме2. Resistors in layers: Isolation; Base; Resistor
Process Description	Number of masks, pcs. 13 Mean design rule,µm 6.0 Substrate: Si/B-doped/ p-type/ Thk 460/ Res 10/ (111) Buried layers: Si/Sb-doped/ n-type/Thk 5/Res 17; Si/B-doped/ p-type/Thk 1.6/Res510; Epi layer: Si/P-doped/ N-type/ Thk 10/ Res 1.25; Isolation: p-n junction p-base depth, µm 2.4 N+emitter depth, µm 1.7 Emitter size, µm 6 Distance between transistors, µm 6 Switching: contacts 1, µm 4 space line Me 1, µm 13.0 contacts 2, µm 4*4 space line Me 2, µm 12.0

Parameter

Meaning

Application, features

Small and medium-scale integration digital-analogue IC, VDD < 18 V

NPN Vertical:

bn=150 Uce=28 V

РNP Lateral:

bр=35 Uсе=45 V

РNP Vertical:

bр=35 Uсе=45 V

I2L gate

Capacitors:emitter-base; collector-base; Ме-n+;

Ме1-Ме2.

Resistors in layers:

Isolation; Base; Resistor

Process Description

Number of masks, pcs.                                                         13

Mean design rule,µm                                                            6.0

Substrate:         Si/B-doped/ p-type/ Thk 460/ Res 10/ (111)

Buried layers:                  Si/Sb-doped/ n-type/Thk 5/Res 17;

                                        Si/B-doped/ p-type/Thk 1.6/Res510;

Epi layer:                    Si/P-doped/ N-type/ Thk 10/ Res 1.25;

Isolation:                                                                 p-n junction

p-base depth, µm                                                                  2.4

N+emitter depth, µm                                                             1.7

Emitter size, µm                                                                         6

Distance between transistors, µm                                        6

Switching:

contacts 1, µm                                                                            4

space line Me 1, µm                                                           13.0

contacts 2, µm                                                                       4*4

space line Me 2, µm                                                             12.0

To order

The order, cost and terms of fulfillment of orders for the supply of small-scale batches of products are additionally agreed by the Consumer with the marketing and sales services of OJSC "INTEGRAL" - the management company of the holding "INTEGRAL"

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Tel.: .....(+375 17) 272 3729
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