20 V,p-n junction isolation “Bp30С-20” complementary

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20 V,p-n junction isolation “Bp30С-20” complementary

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Parameter	Meaning
Application, features	Small and medium-scale integration digital-analogue IC, VDD < 18 V NPN transistor vertical: bn=150 Uce=27 V РNP transistor lateral: bр=30 Uсе=35 V РNP transistor vertical: bр=45 Uсе=35 V РNP Vertical with isolated collector: bр=80 Uсе=30 V Capacitors:emitter-base; collector base; Ме-n+; Ме1-Ме2. Resistors in layers: Isolation; Base; Resistor
Process Description	Number of masks, pcs. 12-14 Mean design rule,µm 6.0 Substrate: Si/B-doped/ p-type/ Thk 460/ Res 10/ (111) Buried layers: Si/Sb-doped/n-type/Thk 6.0/Res 20; Si/ B-doped/p-type/Thk 1.95/Res 210; Epi layer: Si/P-doped/ n-type/ Thk 8/ Res 1.5; Isolation: p-n junction p-base depth, µm 2.0 N+emitter depth, µm 1.7 Emitter size, µm 77 Distance between transistors, µm 4 Switching: contacts 1, µm 33 space line Me 1, µm 9.0 contacts 2, µm 4*4 space line Me 2, µm 12.0

Parameter

Meaning

Application, features

Small and medium-scale integration digital-analogue IC, VDD < 18 V

NPN transistor vertical:

bn=150 Uce=27 V

РNP transistor lateral:

bр=30 Uсе=35 V

РNP transistor vertical:

bр=45 Uсе=35 V

РNP Vertical with isolated collector:

bр=80 Uсе=30 V

Capacitors:emitter-base; collector base; Ме-n+;

Ме1-Ме2.

Resistors in layers:

Isolation; Base; Resistor

Process Description

Number of masks, pcs.                                                     12-14

Mean design rule,µm                                                              6.0

Substrate:         Si/B-doped/ p-type/ Thk 460/ Res 10/ (111)

Buried layers:                Si/Sb-doped/n-type/Thk 6.0/Res 20;

                                    Si/ B-doped/p-type/Thk 1.95/Res    210;

Epi layer:                       Si/P-doped/ n-type/ Thk 8/ Res     1.5;

Isolation:                                                   p-n junction

p-base depth, µm                                                                    2.0

N+emitter depth, µm                                                               1.7

Emitter size, µm                                                                      7*7

Distance between transistors, µm                                         4

Switching:

contacts 1, µm                                                                       3*3

space line Me 1, µm                                                              9.0

contacts 2, µm                                                                       4*4

space line Me 2, µm                                                           12.0

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