MENU HIGH TECHNOLOGIES FOR BETTER LIFE
EN
Выбрать язык
RU CN BY

15 V, p-n junction isolation

Parameter Meaning
Application, features Small and medium-scale integration digital-analogue IC, VDD < 18 V

 

NPN Vertical:

bn=150 Uce=28 V

РNP Lateral:

bр=35 Uсе=45 V

РNP Vertical:

bр=35 Uсе=45 V

Capacitor:Ме-n+emitter

Resistors in PolySi layer
Process Description Number of masks, pcs.                                                    10-13

Mean design rule,µm                                                             6.0

Substrate:          Si/B-doped/ p-type/ Thk 460/ Res 10/ (111)

Buried layers:              Si/Sb-doped/ n -type/Thk 6.0/Res 20;

                                       Si/B-doped/ p-type/Thk 1.95/Res210;

Epi layer:                          Si/ P-doped/ n-type/ Thk 8/ Res 4.5;

Isolation:                                                                   p-n junction

p-base depth, µm                                                                    2.4

N+emitter depth, µm                                                               1.7

Emitter size, µm                                                                          6

Distance between transistors, µm                                          6

Switching: 

contacts 1, µm                                                                             4

space line  Me 1, µm                                                                13
The order, cost and terms of fulfillment of orders for the supply of small-scale batches of products are additionally agreed by the Consumer with the marketing and sales services of OJSC "INTEGRAL" - the management company of the holding "INTEGRAL"

Marketing & Sales Department
Tel.: .....(+375 17) 272 3729
       ......(+375 17) 353 2257
Fax:......(+375 17) 353 2257
E-mail: export@integral.by

Задать вопрос