15 V, p-n junction isolation
Parameter | Meaning |
---|---|
Application, features | Small and medium-scale integration digital-analogue IC, VDD < 18 V NPN Vertical: bn=150 Uce=28 V РNP Lateral: bр=35 Uсе=45 V РNP Vertical: bр=35 Uсе=45 V Capacitor:Ме-n+emitter Resistors in PolySi layer |
Process Description | Number of masks, pcs. 10-13 Mean design rule,µm 6.0 Substrate: Si/B-doped/ p-type/ Thk 460/ Res 10/ (111) Buried layers: Si/Sb-doped/ n -type/Thk 6.0/Res 20; Si/B-doped/ p-type/Thk 1.95/Res210; Epi layer: Si/ P-doped/ n-type/ Thk 8/ Res 4.5; Isolation: p-n junction p-base depth, µm 2.4 N+emitter depth, µm 1.7 Emitter size, µm 6 Distance between transistors, µm 6 Switching: contacts 1, µm 4 space line Me 1, µm 13 |
The order, cost and terms of fulfillment of orders for the supply of small-scale batches of products are additionally agreed by the Consumer with the marketing and sales services of OJSC "INTEGRAL" - the management company of the holding "INTEGRAL"
Marketing & Sales Department
Tel.: .....(+375 17) 272 3729
......(+375 17) 353 2257
Fax:......(+375 17) 353 2257
E-mail: export@integral.by
Tel.: .....(+375 17) 272 3729
......(+375 17) 353 2257
Fax:......(+375 17) 353 2257
E-mail: export@integral.by