0 V, p-n junction isolation “Bp30-20”

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0 V, p-n junction isolation “Bp30-20”

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Parameter	Meaning
Application, features	Small and medium-scale integration digital-analogue IC, VDD < 18 V NPN transistor vertical: bn=150 Uce=28 V РNP transistor lateral: bр=35 Uсе=45 V РNP transistor vertical: bр=35 Uсе=45 V I2L gate Capacitors:emitter-base; collector-base; Ме-n+; Ме1-Ме2. Resistors in layers: Isolation; Base; Resistor
Process Description	Number of masks, pcs. 8-13 Mean design rule,µm 6.0 Substrate: Si/B-doped/ p-type/ Thk 460/ Res 10/ (111) Buried layers: Si/ Sb-doped/ n-type/Thk 6.0/Res 20; Si/ B-doped /p-type/Thk 1.95/Res210; Epi layer: Si/ P-doped/ n-type/ Thk 9/ Res 2.0; Isolation: p-n junction p-base depth, µm 2.2 N+emitter depth, µm 1.7 Emitter size, µm 99 Distance between transistors, µm 4 Switching: contacts 1, µm 33 space line Me 1, µm 9.0 contacts 2, µm 4*4 space line Me 2, µm 12.0

Parameter

Meaning

Application, features

Small and medium-scale integration digital-analogue IC, VDD < 18 V

NPN transistor vertical:

bn=150 Uce=28 V

РNP transistor lateral:

bр=35 Uсе=45 V

РNP transistor vertical:

bр=35 Uсе=45 V

I2L gate

Capacitors:emitter-base; collector-base; Ме-n+;

Ме1-Ме2.

Resistors in layers:

Isolation; Base; Resistor

Process Description

Number of masks, pcs.                                                  8-13

Mean design rule,µm                                                        6.0

Substrate:      Si/B-doped/ p-type/ Thk 460/ Res 10/ (111)

Buried layers:           Si/ Sb-doped/ n-type/Thk 6.0/Res 20;

                                 Si/ B-doped /p-type/Thk 1.95/Res210;

Epi layer:                     Si/ P-doped/ n-type/ Thk 9/ Res 2.0;

Isolation:                                                 p-n junction

p-base depth, µm                                                              2.2

N+emitter depth, µm                                                        1.7

Emitter size, µm                                                                9*9

Distance between transistors, µm                                    4

Switching:

contacts 1, µm                                                                   3*3

space line Me 1, µm                                                         9.0

contacts 2, µm                                                                 4*4

space line Me 2, µm                                                      12.0

To order

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