BiCDMOS 48 V, p-n junction isolation, 1 PolySi, 1 Me
BiCDMOS 48 V, p-n junction isolation, 1 PolySi, 1 Me
- Application, features: Power electronics actuator IC<br /><br />NPN Vertical:<br /><br />h21E=25-90 Uсе=20-70 V<br /><br />PNP Lateral:<br /><br />h21E=2,2-30 Uсе=25-60 V<br /><br />NDMOS: Vtn=1.8-2.6В, Usd=60-100 V<br /><br />Low voltage PMOS:<br /><br />Vtp=0.8-1.4 V, Usd =20-35 V<br /><br />High voltage PMOS:<br /><br />Vtp=1.2-2.2 V, Usd =30-80 V<br /><br />NMOS transistor:<br /><br />Vtn=1.1-1.7 V, Usd =15-25 V
- Process Description: Number of masks, pcs. 16<br /><br />Min design rule,µm 3.0<br /><br />Substrate: Si/B-doped/ p-type/ Thk 460/ Res 12/ (100)<br /><br />Buried layers: Si/Sb-doped/ n-type/Thk 20/Res 6;<br /><br /> Si/B-doped/ p-type/Thk 250/Res2.0<br /><br />Epi layer: Si/P-doped/ n-type/ Thk 12/ Res 1.5;<br /><br />Isolation: p-n junction<br /><br />P-well depth, µm 5.0<br /><br />Gate SiO2, Å 750<br /><br />Interlayer dielectric – Medium temp. PSG, µm 0,8