Wafer Fab
Wafer Fab - clean rooms and lines for the formation of IC structures and discrete devices on semiconductor wafers
The total production capacities of crystal production, classes 1, 10, 100, 1000 are:
Processing of plates Ø200 mm with design standards of 0.35 microns - 8.4 thousand pieces / year
Processing of plates Ø150 mm with design standards of 0.8 microns - 78.5 thousand pieces / year
Processing of plates Ø100 mm with design standards of 1.2 microns - 355 thousand pieces / year
Processing of plates Ø100 mm with design standards of 2.0 microns - 180 thousand pieces / year
Plate production
Wafers of single-crystal silicon (PMC) with a diameter of 100, 150, 200 mm
for the production of microelectronic devices:
- with a diameter of 100 mm for microelectronic devices with design standards of more than 1.2 microns;
- with a diameter of 150 mm for microelectronic devices with design standards of 0.8 microns;
- with a diameter of 200 mm for microelectronic devices with design standards of 0.5 - 0.35 microns.
Power:
Production of single-crystal silicon wafers (PMS) for microelectronic devices
- with a diameter of 100 mm - 805 thousand pieces. per year;
- with a diameter of 150 mm - 150 thousand pieces. per year;
- with a diameter of 200 mm - 10 thousand pieces. in year.
Clean rooms:
- class 1 - 195 sq. m.
- class 10 - 920 sq. m.
- class 100 - 1635 sq. m.
- class 1000 - 6500 sq. m.
- class 10000 - 4133 sq. m.
- class 100000 - 16287 sq. m.
Technological possibilities of crystal production:
CMOS technology, 035 µm, 2 PCC, 3 Me
BiCMOS technology, 0.8 µm, 3 PCC, 2 Me
High voltage CMOS technology, 0.8 µm, 2 PCC, 1Me
Bipolar technologies, 1.5…5 µm, 1-2 Me
BiKDMOS, DMOS technologies, 0.8…2 µm, 1 Me
Microwave Bipolar Transistor Technology
Schottky Diode Technology
Planar manufacturing technology of thyristors with counter-diffusion separation
Epitaxial-planar and diffusion-planar technologies for manufacturing silicon semiconductor devices, including high-power high-voltage transistors